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1. Characterization of 2D materials
We specialize in the comprehensive characterization of 2D materials, encompassing electrical, optical, and mechanical properties. This includes precise measurements using Atomic Force Microscopy (AFM) for mechanical analysis and charge transport studies. We also employ photoluminescence measurements to observe exciton complexes and analyze the band structure in both pristine 2D materials and their heterostructures. Additionally, we investigate the influence of electrostatic and magnetic fields on the properties of these materials. The characterization of 2D materials elucidates fundamental physical phenomena, advancing knowledge in condensed matter physics and nanotechnology. Our precise measurements and analyses pave the way for tailored applications in electronics, photonics, and quantum computing, promising high-performance devices and innovative technologies.

2. Investigation of 2D crystal structures
We delve into the structural aspects of 2D materials, including surface functionalization, phase transitions, and defect analysis. Recently, we explore methods to modulate twisted van der Waals heterostructures and control interlayer interactions to tailor the properties of 2D materials for specific applications. By investigating structural intricacies and modulation techniques, our research not only expands our understanding of 2D materials but also lays the foundation for developing customizable materials with enhanced functionalities, driving innovation across various technological domains.

3. Growth of 2D materials and fabrication processing
Our group is at the forefront of large-scale growth techniques for 2D materials, employing chemical vapor deposition and epitaxial/hypotaxial growth methods. We study growth mechanisms and develop processes for large-area patterning and complex 3D structure fabrication. Furthermore, we focus on deposition control of bulk materials on 2D substrates and develop stacking and transfer techniques for van der Waals heterostructures. Our work in large-scale growth techniques and precise control over material deposition accelerates the development of 2D materials, enabling the fabrication of complex structures essential for advanced electronic and optoelectronic devices, fostering innovations in next-generation technologies.

4. Next-generation electronic devices
We fabricate advanced electronic devices utilizing van der Waals heterostructures, resulting in flexible, transparent, and multi-functional devices. We develop fabrication processes for seamless integration of 2D devices and engineer low-resistance contacts for enhanced performance. Our research extends to synaptic devices for neuromorphic computing, light-emitting devices, and advanced optoelectronic devices leveraging exciton complexes. Additionally, we explore logic-in-memory computing concepts based on 2D materials.

•"Hypotaxy of Wafer-scale Single Crystal Transition Metal Dichalcogenides" Nature 638, 957–964 (2025)
•"200-mm-wafer-scale Integration of Polycrystalline Molybdenum Disulfide Transistors" Nature Electronics 7, 356–364 (2024)
•"Electrically Confined Electroluminescence of Neutral Excitons in WSe2 Light-emitting Transistors" Advanced Materials 36, 14, 2310498 (2024)
•"Thermally Induced Atomic Reconstruction of Transition Metal Dichalcogenide Layers into Fully Commensurate Structures" Nature Materials 22, 1463–1469 (2023)"
•"In-plane Anisotropy of Graphene by Strong Interlayer Interaction with van der Waals Epitaxially-grown MoO " Science Advances 9, eadg6696 (2023)
•"Irreversible Conductive Filament Contacts for Passivated van der Waals Heterostructure Devices" Advanced Functional Materials 32, 41, 2207351 31, 51, 2107376 (2022)
•"Anomalous Dimensionality-driven Phase Transition of MoTe2 in van der Waals Heterostructure" Advanced Functional Materials (2021)
•"‌Atomic-Layer-Confined Multiple Quantum Wells Enabled by Monolithic Bandgap Engineering of Transition Metal Dichalcogenides" Science Advances 7, 13, eabd7921 (2021)
•"Multi-operation Mode Light Emitting Field-Effect Transistors Based on van der Waals Heterostructure" Advanced Materials 32, 2003567 (2020)
•"Thickness-insensitive Properties of α-MoO3 Nanosheets by Weak Interlayer Coupling" Nano Letters 19, 8868-8876 (2019)
•"Atomically-precise Graphene Etch Stops for 3D Integrated Systems from 2D Material Heterostructures" Nature Communications 9, 3988 (2018)
•"Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact Resistance and Threshold Voltage" ACS Nano 9, 7019–7026 (2015)
•"Multi-Terminal Transport Measurements of MoS2 Using van der Waals Heterostructure Device Platform" Nature Nanotechnology 10, 534–540 (2015)
•"Atomically Thin p-n Junctions with van der Waals Heterointerfaces" Nature Nanotechnology 9, 676-681 (2014)
•"Effect of Defects on the Intrinsic Strength and Stiffness of Graphene" Nature Communications 5, 3186 (2014)
•"Graphene Mechanical Oscillators with Tunable Frequency" Nature Nanotechnology 8, 923-927 (2013)
•"Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures" ACS Nano 7, 7931–7936 (2013)
•"High Strength Chemical Vapor Deposited Graphene and Grain Boundaries" Science 340, 1073-1076 (2013)
•"Grains and Grain Boundaries in Highly Crystalline Monolayer Molybdenum Disulphide" Nature Materials 12, 554-561 (2013)
•"Controlled Charge Trapping by MoS2 and Graphene in Ultrathin Heterostructured Memory Devices" Nature Communications 4, 1624 (2013)
•"Tightly Bound Trions in Monolayer MoS2" Nature Materials 12, 207-211 (2013)

Our research focuses on the fundamental properties of nano-scale materials and technological applications of converged nanomaterials. The main studies include investigation of fundamental properties of low-dimensional materials, such as graphene, transition metal dichalcogenides, and 2D oxides, and their large-area growth for practical applications. By combining these materials, new material systems of van der Waals heterostructures are artificially fabricated and studied for advanced electronics and energy applications.