Seoul National Univ. DMSE


Hwang, Cheol-Seong
  • 1993

    Ph. D : Seoul National University, Department of Materials Science and Engineering

  • 1989

    M.S : Seoul National University, Department of Materials Science and Engineering

  • 1987

    B.S : Seoul National University, Department of Materials Science and Engineering

  • 2020-Present

    SNU Distinguished Professor, Seoul National University

  • 2019-Present

    Member of National Academy of Engineering of Korea(NAEK)

  • 2018-Present

    Editorial Board Member, Physica Status Solidi(RRL), Wiley-VCH, Germany

  • 2015-Present

    Regular member of Korean Academy of Science and Technology (KAST)

  • 2014-Present

    International Advisory Board Member, Advanced Electronic Materials, Wiley-VCH, Germany

  • 2014-Present

    Fellow, Royal Society of Chemistry, UK

  • 2014-2016

    Director, Inter-university Semiconductor Research Center, Seoul National University

  • 2012-Present

    Editorial Board Member, Scientific Reports, Nature Publishing Group

  • 1998-Present

    Seoul National University, Department of Materials Science and Engineering, Professor

  • 1994-1997

    Samsung Electronics, Senior Researcher

  • 1993-1994

    Ceramics Division of Material Science and Engineering Lab., National Institute of Standards and Technology, MD USA, Post-doctoral Research Fellow

Research Interests
1. Thin films technology for next-generation nonvolatile memory applications* Ferroelectric memory materials: Research of Pb(Zr,Ti)O3, BiFeO3 thin films.
* Resistive memory materials: Research of transition metal oxide TiO2, NiO,TaOx, HfO2 thin films.
* Phase change memory materials: Research of phase change material (GeSbTe) thin films.
* Charge trap flash memory materials: Research of ZnSnOx, and InGaZnOx thin films and application to 3D structure.2. Thin films technology for DRAM and Logic device applications* High-k materials: Research of TiO2, SrTiO3, (Ba, Sr)TiO3, Al-doped TiO2, TiO2/HfO2 stack, ZrO2, HfO2, and Hfsilicate thin films.
* Metal electrodes materials: Research of RuO2, Ru, SrRuO3, Hf, and Ti, TiN, and La thin films.
* High mobility channel materials: Characterizations of high-k materials on Ge or III-V compound semiconductor materials.3. Thin films technology for display device applications* Transparent conducting oxides materials: Research of ZnO, In-Ga-Zn-O, SnO, ZTO and ITO thin films
Selected Publications
1. Patents* Nonvolatile memory element, method for recording and reading the same (KOR 1021973) (2011)
* Charge trap flash memory device and method of fabricating the same (KOR 1029041) (2011)
* High-speed switching resistance switching element and method of switching resistance switching element
(KOR 1034838)) (2011)
[Total of 63 domestic and international patents]2. Papers* "Deposition of extremely thin (Ba,Sr)TiO3 thin films for ultra-large-scale integrated dynamic random access
memory application", Appl. Phys. Lett., 67, 2819 (1995)
* "Atomic structure of conducting nanofilaments in TiO2 resistive switching memory", Nat. Nanotechnol., 5, 148 (2010)
* "Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition", J. Appl. Phys., 98, 033715 (2005)
* "Tristate Memory Using Ferroelectric-Insulator-Semiconductor Heterojunctions for 50% Increased Data
Storage", Adv. Funct. Mater., 21, 4305 (2011)
* "Capacitors with an Equivalent Oxide Thickness of < 0.5 nm for Nanoscale Electronic Semiconductor Memory",
invited feature article, Adv. Funct. Mater., 20, 2989 (2010)
[Total of ~ 370 publications in SCI journals]3. Books* "Metal-organic Chemical Vapor Deposition of High Dielectric (Ba,Sr)TiO3 Thin Films for Dynamic Random
Access Memory Applications"in "Chemical Vapor Deposition", ��쾄urface Engineering Series Volume 2��� ASMinternational,
chap. 7, p.205-242
* "Atomic layer deposition for microelectronic applications"in "Atomic Layer Deposition of Nanostructured
Materials",VCH-Wiley, chap. 8, p.161-192
* "Capacitor-based Random Access Memory" in "Nanoelectronics and Information Technology 3rd edtion", Wiley-
VCH, chap. 27, pp.635-654
Lab Overview
1. Next generation memory and transistor development* Development and characterization of thin film technology for DRAM, FeRAM, ReRAM, PcRAM and CTF.2. Oxide thin film transistors for next generation transparent and flexible displays