Seoul National Univ. DMSE


Hwang, Nong-moon
  • 1986

    Ph.D : Korea Advanced Institute of Science and Technology, Department of Materials Science and Engineering

  • 1983

    M.S : Korea Advanced Institute of Science and Technology, Department of Materials Science and Engineering

  • 1981

    B.S : Seoul National University, Department of Metallurgical Engineering

  • 2003-Current

    Seoul National University, Department of Materials Science and Engineering, Professor

  • 1996

    National Research Institute of metals, Tsukuba, Japan, Visiting Scientist

  • 1989-1990

    National Institute of Standards and Technology, USA, Visiting Scientist

  • 1986-2003

    KRISS, Senior Research Scientist

Research Interests
1. The growth mechanism of thin films, nanowires, and nanotubes based on the theory of charged nanoparticles* Detecting charged nano-particles during CVD with a differential mobility analyzer (DMA) and a particle beam
mass spectroscopy (PBMS)
* Comparison of deposition behavior between electrically floated and grounded substrates2. Applications based on the theory of charged nanoparticles* Low temperature deposition of crystalline Si and SiNx
* Synthesis of Si nanowires, ZnO nanowires, GaN nanowires, and CNTs3. Microstructure control of films and nanostructures by applying the electric bias during deposition* DC and AC biases4. The theory of solid-state wetting as a mechanism of secondary recrystallization of metals* Computer simulations for secondary recrystallization
* Goss selective growth in Fe-3%Si steel
* The role of sub-boundaries in secondary recrystallization
Selected Publications
1. Patents* Method of depositing films using bias, (KOR 10-0846718-0000) (2008)
* Method of forming silicon nitride at low temperature, charge trap memory device comprising crystalline nano
dots formed using the same and method of manufacturing charge trap memory device, (US 12/213,329) (2008)
* Method for production of thin film and apparatus for manufacturing the same, (KOR 8793309.9) (2009)
* Apparatus and method of films using bias and charging behavior of nanoparticles formed during chmical vapor
deposition, (KOR 12/440,304) (2009)
[Total of 23 domestic and international patents]2. Papers* "Charged Clusters in Thin Film Growth", Intern. Mater. Rev., 49, 171 (2004) (Review Article)
* "Effect of Interface Structure on the Microstructural Evolution of Ceramics", J. Am. Ceram. Soc. , 89, 2369 (2006) (Feature Article)
* "Effect of Bias Applied to Hot Wires on Generation of Positive and Negative Charges during Silicon Hot Wire
Chemical Vapor Deposition", J. Phys. Chem. C, 89, 2369 (2009)
* "Abnormal Grain Growth of Goss grains in Fe-3% Si steel driven by sub-boundary-enhanced solid-state wetting:
Analysis by Monte Carlo simulation", Acta Mater., 58, 4414 (2010)
* "Charged nanoparticles in thin film and nanostructure growth by chemical vapour deposition", J. Phys. D Appl.
Phys., 43, 483001 (2010) (Review Article)
* "Low temperature deposition of crystalline silicon on glass by hot wire chemical vapor deposition , J. Cryst.
Growth, 327, 57 (2011)
[Total of ~200 International Journal Papers]
Lab Overview
1. Effect of electrostatic energy on selective deposition during CVD* Comparison of the electrostatic energy between charged nanoparticles and conducting or insulating substrates

2. Effect of electrostatic energy on the growth of nanowires, nanosheets and films

3. Self-assembly of charged nanoparticles and charge-induced atomic diffusion* Thin film solar cells with high efficiency using low temperature crystalline Si
4. Effect of sub-boundary and precipitates on abnormal grain growth