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1. Emerging Oxide and Quantum Materials
-  Oxide Materials with Phase Transition
-  Oxide Semiconductors with High Electron Mobility
-  Oxide Heterostructures and Quantum Wells
2. Emerging Devices and Sensors
-  Next-generation Electronic Devices
-  Ultrasensitive Gas and Bio Sensors
-  Threshold Mott Switches and Memory Devices
3. Thin Film Growth and Characterization
-  Epitaxial Thin Film Growth
-  Atomically Controlled Oxide Heterostructures
-  Synchrotron-based Characterization

1. Papers
- “Piezo-strain-controlled phase transition in single-crystalline Mott switches for threshold-manipulated leaky-integrate-and-fire neurons”, Science Advances (2024)
- “Embedded metallic nanoparticles facilitate metastability of switchable metallic domains in Mott threshold switches”, Nature Communications, 13, 4609 (2022)
- “Reversible manipulation of photoconductivity caused by surface oxygen vacancies in perovskite stannates with ultraviolet light”, Advanced Materials, 34, 2107650 (2022)
- “Heterogeneous integration of single-crystalline rutile nanomembranes with steep phase transition on silicon substrates”, Nature Communications, 12, 5019 (2021)
- “Reversible phase modulation and hydrogen storage in multivalent VO2 epitaxial films”, Nature Materials, 15, 1113 (2016)

Our research focuses on the fundamental understanding of structure-property relationships of nanoscale oxide materials and quantum heterostructures, including functional defects in oxide semiconductors and low-dimensional oxides. We are paticularly interested in designing new functionality of emerging inorganic materials, such as phase-transforming oxides and high-electron-mobility oxide semiconductors, by materials discovery and defect control. Emerging oxide materials with maximized properties can dramatically improve the performance of next-generation semiconductor devices as a key ingredients for future technology (e.g., 1) transparency and high conductivity for transparent electronics, 2) a metal-insulator phase transition for a low-power switching device and an ultra-sensitive sensor device, 3) ferroelectricity for nonvolatile memory devices, 4) high electron mobility for high-speed electronic devices)). Based on the new functionality of various oxide semiconductors developed by our group, we are also conducting research and development on the possibility of realizing low-power and high-density electronics, high-sensitivity sensors and various future applications that could not be achieved before.