Seoul National Univ. DMSE
People
Faculty
Hwang, Nong-moon
professor
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Mailstop
33-309
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Phone
880-8922
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Fax
885-3292
- Homepage
Education
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1986
Ph.D : Korea Advanced Institute of Science and Technology, Department of Materials Science and Engineering
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1983
M.S : Korea Advanced Institute of Science and Technology, Department of Materials Science and Engineering
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1981
B.S : Seoul National University, Department of Metallurgical Engineering
Career
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2003-Current
Seoul National University, Department of Materials Science and Engineering, Professor
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1996
National Research Institute of metals, Tsukuba, Japan, Visiting Scientist
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1989-1990
National Institute of Standards and Technology, USA, Visiting Scientist
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1986-2003
KRISS, Senior Research Scientist
Research Interests
1. The growth mechanism of thin films, nanowires, and nanotubes based on the theory of charged nanoparticles* Detecting charged nano-particles during CVD with a differential mobility analyzer (DMA) and a particle beam
mass spectroscopy (PBMS)
* Comparison of deposition behavior between electrically floated and grounded substrates2. Applications based on the theory of charged nanoparticles* Low temperature deposition of crystalline Si and SiNx
* Synthesis of Si nanowires, ZnO nanowires, GaN nanowires, and CNTs3. Microstructure control of films and nanostructures by applying the electric bias during deposition* DC and AC biases4. The theory of solid-state wetting as a mechanism of secondary recrystallization of metals* Computer simulations for secondary recrystallization
* Goss selective growth in Fe-3%Si steel
* The role of sub-boundaries in secondary recrystallization
mass spectroscopy (PBMS)
* Comparison of deposition behavior between electrically floated and grounded substrates2. Applications based on the theory of charged nanoparticles* Low temperature deposition of crystalline Si and SiNx
* Synthesis of Si nanowires, ZnO nanowires, GaN nanowires, and CNTs3. Microstructure control of films and nanostructures by applying the electric bias during deposition* DC and AC biases4. The theory of solid-state wetting as a mechanism of secondary recrystallization of metals* Computer simulations for secondary recrystallization
* Goss selective growth in Fe-3%Si steel
* The role of sub-boundaries in secondary recrystallization
Selected Publications
1. Patents* Method of depositing films using bias, (KOR 10-0846718-0000) (2008)
* Method of forming silicon nitride at low temperature, charge trap memory device comprising crystalline nano
dots formed using the same and method of manufacturing charge trap memory device, (US 12/213,329) (2008)
* Method for production of thin film and apparatus for manufacturing the same, (KOR 8793309.9) (2009)
* Apparatus and method of films using bias and charging behavior of nanoparticles formed during chmical vapor
deposition, (KOR 12/440,304) (2009)
[Total of 23 domestic and international patents]2. Papers* "Charged Clusters in Thin Film Growth", Intern. Mater. Rev., 49, 171 (2004) (Review Article)
* "Effect of Interface Structure on the Microstructural Evolution of Ceramics", J. Am. Ceram. Soc. , 89, 2369 (2006) (Feature Article)
* "Effect of Bias Applied to Hot Wires on Generation of Positive and Negative Charges during Silicon Hot Wire
Chemical Vapor Deposition", J. Phys. Chem. C, 89, 2369 (2009)
* "Abnormal Grain Growth of Goss grains in Fe-3% Si steel driven by sub-boundary-enhanced solid-state wetting:
Analysis by Monte Carlo simulation", Acta Mater., 58, 4414 (2010)
* "Charged nanoparticles in thin film and nanostructure growth by chemical vapour deposition", J. Phys. D Appl.
Phys., 43, 483001 (2010) (Review Article)
* "Low temperature deposition of crystalline silicon on glass by hot wire chemical vapor deposition , J. Cryst.
Growth, 327, 57 (2011)
[Total of ~200 International Journal Papers]
* Method of forming silicon nitride at low temperature, charge trap memory device comprising crystalline nano
dots formed using the same and method of manufacturing charge trap memory device, (US 12/213,329) (2008)
* Method for production of thin film and apparatus for manufacturing the same, (KOR 8793309.9) (2009)
* Apparatus and method of films using bias and charging behavior of nanoparticles formed during chmical vapor
deposition, (KOR 12/440,304) (2009)
[Total of 23 domestic and international patents]2. Papers* "Charged Clusters in Thin Film Growth", Intern. Mater. Rev., 49, 171 (2004) (Review Article)
* "Effect of Interface Structure on the Microstructural Evolution of Ceramics", J. Am. Ceram. Soc. , 89, 2369 (2006) (Feature Article)
* "Effect of Bias Applied to Hot Wires on Generation of Positive and Negative Charges during Silicon Hot Wire
Chemical Vapor Deposition", J. Phys. Chem. C, 89, 2369 (2009)
* "Abnormal Grain Growth of Goss grains in Fe-3% Si steel driven by sub-boundary-enhanced solid-state wetting:
Analysis by Monte Carlo simulation", Acta Mater., 58, 4414 (2010)
* "Charged nanoparticles in thin film and nanostructure growth by chemical vapour deposition", J. Phys. D Appl.
Phys., 43, 483001 (2010) (Review Article)
* "Low temperature deposition of crystalline silicon on glass by hot wire chemical vapor deposition , J. Cryst.
Growth, 327, 57 (2011)
[Total of ~200 International Journal Papers]
Lab Overview
1. Effect of electrostatic energy on selective deposition during CVD* Comparison of the electrostatic energy between charged nanoparticles and conducting or insulating substrates
2. Effect of electrostatic energy on the growth of nanowires, nanosheets and films
3. Self-assembly of charged nanoparticles and charge-induced atomic diffusion* Thin film solar cells with high efficiency using low temperature crystalline Si
4. Effect of sub-boundary and precipitates on abnormal grain growth
2. Effect of electrostatic energy on the growth of nanowires, nanosheets and films
3. Self-assembly of charged nanoparticles and charge-induced atomic diffusion* Thin film solar cells with high efficiency using low temperature crystalline Si
4. Effect of sub-boundary and precipitates on abnormal grain growth