Seoul National Univ. DMSE
People
Faculty
Lee, Gwan-Hyoung
Associate Professor
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Mailstop
33-319
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Phone
880-8366
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Fax
885-9671
- Homepage
Career
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2019-present
Seoul National University, Associate Professor
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2017-2019
Yonsei University, Associate Professor
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2014-2017
Yonsei University, Assistant Professor
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2010-2014
Columbia University, Postdoctoral Researcher
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2009-2010
Samsung Mobile Display Co., Senior Engineer
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2006-2008
Samsung Electronics, Senior Engineer
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2002-2003
University of Illinois at Urbana-Champaign, Visiting Scholar
Research Interests
1. Charaterization of 2D matrials
2. Growth of 2D materials
3. Interface/defect/strain/phase engineering
4. Next-generation electronic devices
2. Growth of 2D materials
3. Interface/defect/strain/phase engineering
4. Next-generation electronic devices
Selected Publications
• “Atomically Precise Graphene Etch Stops for Three Dimensional Integrated Systems from Two Dimensional Material Heterostructures” Nature Communications 9, 3988 (2018)
• “Multi-Terminal Transport Measurements of MoS2 Using van der Waals Heterostructure Device Platform” Nature Nanotechnology 10, 534 (2015)
• “Atomically Thin p-n Junctions with van der Waals Heterointerfaces” Nature Nanotehcnology 9, 676 (2014)
• “Effect of Defects on the Intrinsic Strength and Stiffness of Graphene” Nature Communications 5, 3186 (2014)
• “Grains and Grain Boundaries in Highly Crystalline Monolayer Molybdenum Disulphide” Nature Materials 12, 554–561 (2013)
• “High-Strength Chemical-Vapor–Deposited Graphene and Grain Boundaries” Science 340, 1073-1076 (2013)
• “Controlled Charge Trapping by Molybdenum Disulphide and Graphene in Ultrathin Heterostructured Memory Devices” Nature Communications 4, 1624 (2013)
• “Tightly Bound Trions in monolayer MoS2” Nature Materials 12, 207-211 (2012)
• “Multi-Terminal Transport Measurements of MoS2 Using van der Waals Heterostructure Device Platform” Nature Nanotechnology 10, 534 (2015)
• “Atomically Thin p-n Junctions with van der Waals Heterointerfaces” Nature Nanotehcnology 9, 676 (2014)
• “Effect of Defects on the Intrinsic Strength and Stiffness of Graphene” Nature Communications 5, 3186 (2014)
• “Grains and Grain Boundaries in Highly Crystalline Monolayer Molybdenum Disulphide” Nature Materials 12, 554–561 (2013)
• “High-Strength Chemical-Vapor–Deposited Graphene and Grain Boundaries” Science 340, 1073-1076 (2013)
• “Controlled Charge Trapping by Molybdenum Disulphide and Graphene in Ultrathin Heterostructured Memory Devices” Nature Communications 4, 1624 (2013)
• “Tightly Bound Trions in monolayer MoS2” Nature Materials 12, 207-211 (2012)
Lab Overview
Our research focuses on the fundamental properties of nano-scale materials and technological applications of converged nanomaterials. The main studies include investigation of essential properties of low-dimensional materials, such as electrical, optical and mechanical characteristics and large-area growth for practical applications. By combining these materials, new material systems of heterostructures will be artificially fabricated and studied for optoelectrical and flexible applications.