Seoul National Univ. DMSE
People
Faculty
Yi, Kyung-Woo
professor
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Mailstop
33-117
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Phone
880-8318
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Fax
884-1413
- Homepage
Education
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1992
Ph. D : Seoul National University, Department of Materials Science and Engineering
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1989
M.S : Seoul National University, Department of Materials Science and Engineering
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1986
B.S : Seoul National University, Department of Materials Science and Engineering
Career
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2009-2011
College of Liberal Studies, Seoul National University, Associate Dean
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2009-Current
Center for Metallurgic Research, Research Institute of Advanced Materials, Seoul National University, Head of Research
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2004-2009
Faculty of Liberal Education, Seoul National University, Dean of the Engineering division
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1996-present
Seoul National University, Department of Materials Science and Engineering, Professor
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1995-1996
Korea Institute of Science and Technology, Research Scientist
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1992-1995
NEC, Japan, Research Scientist
Research Interests
1. Steel manufacturing and characterization* Flow and mass/heat transfer analysis for fabrication of low-carbon steels
* Impurity analysis and control for clean steel
* LF and RH refining technology
* Analysis of Initial solidification behavior and liquid flux layer shape in continuous casting processing
* Inclusion dynamics in continuous casting processing2. Single crystal growth* Controlling melt behavior during silicon and sapphire crystal growth
* Global modeling for silicon and sapphire single crystal growth by Czochralski method
* Global modeling for silicon quasi-single crystal growth by Bridgman method3. Hydrogen storage device* Numerical analysis for hydrogen storage device design
* Development of a thermal model for discharge behavior of MH hydrogen storage vessels4. Electrochemical process studies* Ti electrowinning : direct electro-reduction of titanium dioxide
* Numerical analysis of electroplating system
* Impurity analysis and control for clean steel
* LF and RH refining technology
* Analysis of Initial solidification behavior and liquid flux layer shape in continuous casting processing
* Inclusion dynamics in continuous casting processing2. Single crystal growth* Controlling melt behavior during silicon and sapphire crystal growth
* Global modeling for silicon and sapphire single crystal growth by Czochralski method
* Global modeling for silicon quasi-single crystal growth by Bridgman method3. Hydrogen storage device* Numerical analysis for hydrogen storage device design
* Development of a thermal model for discharge behavior of MH hydrogen storage vessels4. Electrochemical process studies* Ti electrowinning : direct electro-reduction of titanium dioxide
* Numerical analysis of electroplating system
Selected Publications
1. Patents* Apparatus and method for growing single crystal by Czochralski method, ROK 10-1026390
* UNIT CELL FOR PHASE CHANGE RANDOM ACCESS MEMORY DEVICE WITH MULTIPLE BITS PER CELL, ROK 2006-0034258
[Total of 2 Patents]2. Papers* "The effect of polycrystalline rod insertion in a low Prandtl number melt for continuous Czochralski system", J. Cryst. Growth, 312, 1458 (2010)
* "Numerical Modeling and Analysis of the Thermal Behavior of Copper Molds in Continuous Casting", Met. Mater. Int., 16, 281 (2010)
* "The effect of Ge addition on the RESET operation of a phase-change memory(PCM) device using Ge-doped SbTe", Curr. Appl. Phys., 10, e79 (2010)
[Total of 53 Publications]3. Book* Modeling of Transport Phenomena in Crystal Growth, WIT, Ch.8
* UNIT CELL FOR PHASE CHANGE RANDOM ACCESS MEMORY DEVICE WITH MULTIPLE BITS PER CELL, ROK 2006-0034258
[Total of 2 Patents]2. Papers* "The effect of polycrystalline rod insertion in a low Prandtl number melt for continuous Czochralski system", J. Cryst. Growth, 312, 1458 (2010)
* "Numerical Modeling and Analysis of the Thermal Behavior of Copper Molds in Continuous Casting", Met. Mater. Int., 16, 281 (2010)
* "The effect of Ge addition on the RESET operation of a phase-change memory(PCM) device using Ge-doped SbTe", Curr. Appl. Phys., 10, e79 (2010)
[Total of 53 Publications]3. Book* Modeling of Transport Phenomena in Crystal Growth, WIT, Ch.8
Lab Overview
1. Large scale single crystal Si growth apparatus2. Water model system simulating steel degassing process3. Hydrogen storage prototype model4. Technological Specialties
* Conductor melt velocity sensors
* 3-dimensional flux analysis model
* Models that anticipate particle growth in liquids
* Models for hydrogen storage and electroplating system characterization
* Conductor melt velocity sensors
* 3-dimensional flux analysis model
* Models that anticipate particle growth in liquids
* Models for hydrogen storage and electroplating system characterization