Seminar & Colloquium
[세미나: 4월 10일(월), 오후 2시] Dr. Patrick Naulleau, EUV Tech Inc.
TITLE
Challenges and opportunities for pushing EUV lithography to the single-digit nm regime
SPEAKER
Dr. Patrick Naulleau, CEO of EUV Tech Inc.
BIOGRAPHY
Patrick Naulleau received his B.S. and M.S. degrees in electrical engineering from the Rochester Institute of Technology, Rochester, NY, in 1991 and 1993, respectively. He received his Ph.D. in electrical engineering from the University of Michigan, Ann Arbor in 1997 specializing in optical signal processing and coherence theory. In 1997 Dr. Naulleau joined Berkeley Lab on the EUV LLC program building the world’s first EUV scanner. From June 2005 through March 2008, Dr. Naulleau additionally joined the faculty at the University at Albany, SUNY as Associate Professor, also concentrating in the area of EUV lithography. In April 2010 Dr. Naulleau took the position of Director of the Center for X-ray Optic at Lawrence Berkeley National Laboratory. In August 2022, Dr. Naulleau became CEO of EUV Tech Inc., a leading supplier of EUV metrology equipment. Dr. Naulleau has over 390 publications as well as 19 Patents and is a Fellow of OSA (now Optica) and SPIE.
| Date | Monday, April 10th, 2023
| Time | 14:00 ~
| Venue | 33동 228호
[Abstract]
Extreme Ultraviolet Lithography (EUVL) has replaced DUV immersion lithography in high volume production at the leading-edge node and 5-nm EUV powered consumer devices are now available. This achievement marks an important milestone after nearly four decades of development of EUV. Despite this tremendous achievement, much work remains to be done to ensure the extendibility of the technology which depends on the development of high numerical aperture (NA ≥ 0.5) systems and processes. High NA significantly stresses several current challenges and brings with it fundamentally new challenges. The most significant new challenge arises from angular bandwidth limitations of the mask multilayer requiring the use of anamorphic optics, or new multilayer material systems as well as polarization concerns that have never been an issue before for EUV owing to the relatively small angles involved. The most significant existing challenge being pushed to a fundamentally new regime with high NA revolves around stochastics in photoresist materials and exposure processes. As we approach the atomic scale, the quantized nature of light and materials is becoming a very significant effect in ultimate performance of the process. Addressing these challenges will require the understanding and control of materials and their interaction with EUV photons at the atomic scale. In this presentation, I will provide an overview of the technology and its history and will further highlight future challenges facing the technology as we strive to push further into the single-digit nanometer range.
| Host | 김성수 교수