Seminar & Colloquium
[세미나: 10월 20일(목), 오전 10시 30분] University of Cambridge, Prof. Henning Sirringhaus
Title
Change Transport and Thermoelectric Properties of High Conductivity of Conjugated Polymers
Speaker
Professor Henning Sirringhaus, Royal Society Research Professor, Hitachi Professor Electron Device Physics, Cavendish Laboratory, University of Cambridge
Education
- 1985 High-school “Abitur” graduation, Hemer (Germany)
- 1985 - 86 Military service
- 1986 - 88 Study of Mathematics and Physics at the University of Hamburg (Germany), Prediploma with distinction.
- 1988 - 91 Study of Physics at the Swiss Federal Institute of Technology ETH Zürich (Switzerland); Diploma with distinction
- 1991 - 95 PhD thesis at the Institute for Solid State Physics of the Swiss Federal Institute of Technology ETH Zürich (CH); Thesis: “Ballistic-electron-emission microscopy on epitaxial CoSi2/Si interfaces” (Prof. P. Wachter)
Academic career
- 1995 - 97 Post-doctoral research in the Department of Electrical Engineering, Princeton University(USA) on amorphous silicon (a-Si) thin film transistors (TFTs) and formation of organic metal-semiconductor interfaces (Prof. S. Wagner, A. Kahn)
- 1997 - 98 Post-doctoral research at the Cavendish Laboratory, University of Cambridge, in the group of Prof. Sir R.H. Friend (FRS, Cavendish Professor) on conjugated polymer TFTs
- 1998 Royal Society University Research Fellowship
- 1999 Fellow & Director of Studies, Churchill College, Cambridge
- 2000 Lecturer, Cavendish Laboratory, Cambridge
- 2002 Reader, Cavendish Laboratory, Cambridge
- 2004 Hitachi Professor of Electron Device Physics, Cavendish Laboratory, Cambridge
- 2009 Elected as Fellow of the Royal Society
- 2020 Royal Society Research Professorship
| Date | Thursday, October 20th, 2022
| Time | 10:30 ~
| Venue | 33동 125호 (WCU 다목적실)
[Abstract]
Doped organic semiconductors are critical to emerging device applications, including thermoelectrics, bioelectronics, and neuromorphic computing devices. It is commonly assumed that low conductivities in these materials result primarily from charge trapping by the Coulomb potentials of the dopant counter-ions. Here, we present a combined experimental and theoretical study based on systematically varying the shape and size of the dopant counterions to investigate the key factors that govern charge transport in a regime of high doping concentration. We find that conductivities are not limited by Coulombic trapping in this regime, but instead by paracrystalline disorder as well as Coulombic interactions between the carriers.
| Host | 강기훈 교수 (880-7189)