제목: Material Innovations for next generation electronics
연사: Prof. Jeehwan Kim, Department of Materials Science and Engineering, Department of Mechanical Engineering, MIT
* EDUCATION
- Ph.D. Materials Science and Engineering University of California at Los Angeles, CA, USA 2008
- M.S. Materials Science and Engineering Seoul National University, Seoul, Korea 1999
- B.S. Materials Science and Engineering Hongik University, Seoul, Korea 1997
* PROFESSIONAL EXPERIENCES
- 2018-Present Associate Professor, MIT, Department of Materials Science and Engineering, Department of Mechanical Engineering
- 2016-2018 Assistant Professor, MIT, Department of Materials Science and Engineering, Department of Mechanical Engineering
- 2008-2015 Research Staff Member, IBM T.J. Watson Research Center, Department of Silicon Technology
- 2007 Research Intern, IBM T.J. Watson Research Center, Department of Silicon Technology
| Date | Monday, July 12th, 2021
| Time | 15:30 ~
| Venue | 33동 315호(관해세미나실)
Abstract
The current electronics industry has been completely dominated by Si-based devices due to its exceptionally low materials cost. However, demand for non-Si electronics is becoming substantially high because current/next generation electronics requires novel functionalities that can never be achieved by Si-based materials. Unfortunately, the extremely high cost of non-Si semiconductor materials and scalability issues prohibit the progress in this field. Thus, innovations in materials science is increasingly important to move forward. In today’s talk, I will discuss how we innovate for next generation electronics based on basic textbooks in materials science and emphasize importance of “simple” and fundamental knowledge. I will introduce my group’s innovations as examples including uniform operation of neuromorphic computing arrays, world largest 2D heterostructures, world first 3D heterostructures of oxide membranes, and highest doping level achieved in germanium.
[1] S. Choi et al, and J. Kim, “SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations” Nature Materials Vol. 17, 335–340 (2018)
[2] H. Yeun et al, and J. Kim, “Alloying conducting channels for reliable analog computing” Nature Nanotechnology Vol. 15, 574–579 (2020)
[3] J. Shim, S. Bae, et al, and J. Kim, “Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials” Science, 362, 665 (2018)
[4] Y. Kim, et al, and J. Kim, “Remote epitaxy through graphene enables two-dimensional material based layer transfer” Nature, Vol. 544, 340 (2017)
[5] H. Kum, et al., and J. Kim, “Heterogeneous integration of single-crystalline complex-oxide membranes, Nature, Vol 578, 75-81 (2020)
[6] J. Kim, S. Bedell, and D. K. Sadana , “Improved germanium n+/p diodes formed by coimplantation of antimony and phosphorus”, Applied Physics Letters, Vol. 98, 082112 (2011)
| Host | Prof. Ki Tae Nam (880-7094)