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제목: Recent progress in III-Vs on Si: from high-efficiency tandem solar cells to visible lasers

연사: Prof. Minjoo Larry Lee, Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign

* BIOGRAPHY

Minjoo Larry Lee received the Sc.B. in Materials Science with honors from Brown University, Providence, RI in 1998 and the Ph.D. in electronic materials from the Massachusetts Institute of Technology (MIT), Cambridge, MA in 2003.  From 2003 to 2006, he was a Postdoctoral Researcher with the Microsystems Technology Laboratory at MIT, and from 2006-2007, he was with the Center for Thermoelectrics Research at RTI International in Durham, NC. In 2008 he joined Yale University in New Haven, CT as an assistant professor, and in 2016 he joined UIUC where he is now a professor of electrical and computer engineering. He is the author or coauthor of over 200 technical papers and conference proceedings and holds nine patents. He has received numerous recognitions including: IBM faculty award; North American conference on MBE (NAMBE) Young Investigator Award; DARPA Young Faculty Award; NSF CAREER award; and the IEEE Electron Device Society George E. Smith award. His advisees have won 12 best presentation prizes at the IEEE Photovoltaic Specialists Conference, MRS fall meeting, Electronic Materials Conference, and NAMBE. He has also been honored for his teaching in areas including circuits, electromagnetics, and IC fabrication.

| Date | Thursday, July 15th, 2021

| Time | 10:00 ~  

| Venue | 33동 223호(동부세미나실)

            줌링크 (https://snu-ac-kr.zoom.us/j/6808574038)

Abstract 

III-V devices represent the gold standard for high performance and reliability in demanding applications that include high-speed optical and wireless communication, energy-efficient lighting, and space solar cells. Since III-V materials are so well-developed, one may ask what new questions remain to be answered? In this talk, I aim to answer this question by describing our efforts to expand the reach of III-V optoelectronics using an approach that spans from materials growth to device fabrication. In particular, we seek opportunities to significantly boost optoelectronic device performance and functionality through integration of lattice-mismatched materials. In the first part of the talk, I will describe efforts in my group to marry the high efficiency of III-V solar cells with the low-cost manufacturing of silicon. Over the past several years, our research has enabled us to reduce the defect density in 1.7 eV GaAsP grown on Si, enabling us to set an efficiency record of 25% for GaAsP/Si tandem solar cells. Next, I will discuss our recent work on AlGaInP-based red lasers on Si, including the recent demonstration of dislocation-tolerant InP quantum dots. Integrating such visible lasers with the SiN photonics platform promises to enable visible integrated photonics on a Si chip with applications in quantum computing, sensing, and metrology. 

| Host | Prof. SangBum Kim (880-7359)