Seminar & Colloquium
[세미나: 9월 23일(월), 오후 4시] Prof. Hyeon-Jin Shin, Gwangju Institute of Science and Technology (GIST)
Title
2D materials design for angstrom-scale devices
Speaker
Prof. Hyeon-Jin Shin, Department of Semiconductor Engineering, Gwangju Institute of Science and Technology (GIST)
* Biography
Dr. Hyeon-Jin Shin has been serving as an Associate Professor at the Gwangju Institute of Science and Technology (GIST) since November last year (2023). Her research focuses on the science and technology of future integrated semiconductor devices with diverse 2D materials. For science, she explores advanced growth, novel property, and new concept device with 2D materials. For technology, she develops CMOS compatible integration process with high performance from lab to fab transition.
Before joining GIST, she worked at Samsung Advanced Institute of Technology (SAIT), Samsung Electronics since 2002, where she served as a Research Master and Project Leader of Graphene and 2D Materials research.
She received Ph.D in Nano science from Sungkyunkwan University (2010), while working at SAIT. She has published 94 articles in high impact journals (including Nature and Nature Electronics) and has been cited more than 10,500 times (hindex of 41). She also has been filled over 100 US patents.
| Date | Monday, September 23rd, 2024
| Time | 16:00 ~
| Venue | 33동 125호(WCU 다목적실)
[Abstract]
Due to our life style changes, data created exponentially and continuously increases. To respond to the huge Data created, conventional Si device scaling down for angstrom era, and 3D stacking device and introduction of disruptive device should be considered [1]. However, the process technology and material performance of Si devices are gradually reaching their limits, and the development of new materials, processes and device architectures is required to overcome these limitations. Graphene and 2D Materials have an ultra-thin crystal structure with a stable surface state. For example, among diverse 2D materials, MoS2 has a great potential in logic transistor because of its high mobility, and no short channel effect [2]. In this talk, we will introduce 2D material growth and integration designs via interface property control to realize the Angstrom-scale multi-stack device: (i) wafer-scale growth [3], (ii) adhesion/pattern [4], and (iii) Interconnect with a low resistance metal barrier [5] and ultralow dielectric material [6].
References
[1] M. C. Lemme., et al., “2D materials for future heterogeneous electronics” Nat. Comm. 13, 1392, 2022
[2] Y. Liu, H.-J. Shin et. al., “Promises and prospects of two-dimensional transistors” Nature, 591 (7848), 43-53, 2021
[3] M. Seol, H.-J. Shin* et. al., “High-throughput Growth of Wafer-scale Monolayer Transition Metal Dichalcogenide via Vertical Ostwald Ripening” Adv. Mater., 32 (42), 2003542, 2020
[4] V. L. Nguyen, H.-J. Shin* et. al., “Wafer-scale integration of transition metal dichalcogenide field-effect transistors using adhesion lithography” Nat. Electron. 5 (12), 2363, 2022
[5] C.-S. Lee, H.-J. Shin* et. al., “Fabrication of metal/graphene hybrid interconnect by direct graphene growth and their integration properties” Adv. Electron. Mater., 12 (4), 1700624, 2018
[6] S. Hong, H.-J. Shin* et. al, “Ultralow-dielectric-constant amorphous boron nitride” Nature, 582 (7813), 511, 2020
| Host | 장호원 교수(02-880-1720)