Seminar & Colloquium
[세미나: 7월 31일(수), 오전 10시 30분] Dr. Jinkyoung Yoo, Los Alamos National Laboratory
Title
Heterogeneous integration of emerging materials and conventional semiconductors
Speaker
Dr. Jinkyoung Yoo, Co-leader, Center for Integrated Nanotechnologies, Los Alamos National Laboratory
* Biography
Jinkyoung Yoo is the co-leader of Quantum Materials Systems thrust of The Center for Integrated Nanotechnologies (CINT), a National Nanoscience Research Center supported by U.S. Department of Energy (DOE), in Los Alamos National Laboratory. He is also a member of the Quantum Science Center, one of five DOE Quantum Information Science Center. He is serving as a panel of the technology council of heterogeneous integration for Semiconductor Research Corporation. He is a principal editor of Journal of Materials Research, edited by Materials research Society and published by Springer-Nature. He received his Ph. D. (Materials Science) from the Pohang University of Science and Technology (POSTECH) in South Korea. He worked at CINT as a post-doctoral researcher from 2010 to 2013. He then joined CINT as a technical staff member in 2013. His research encompasses synthesis of semiconductor nanowire heterostructures, 2D/3D heterostructures, electrical/optical characterizations, and device fabrication to integrate fundamental understandings of nanoscience into applicable devices.
| Date | Wednesday, July 31st , 2024
| Time | 10:30 ~
| Venue | 33동 222호(동부 세미나실)
[Abstract]
Advances in nanoscience have overcome materials compatibility issues and delivered novel functionalities. The progress has come with various nanomaterials, such as two-dimensional (2D) materials, nanowires, nanoparticles, and other hierarchical materials. There is no silver bullet as a universal solution for various applications. Therefore, heterostructuring to fabricate multi-dimensional or hybrid architectures, in which individual constituents’ properties are designed, is a common and promising way.
In this seminar, I will discuss epitaxy of conventional semiconductors, such as silicon (Si), germanium (Ge), and wide bandgap semiconductors (GaN, ZnO), at nanoscales and on non-planar architectures and 2D materials. Although epitaxy of Si-Ge has been studied several decades, the growth behaviors at nano/mesoscales are different from the previous knowledge.
The main topic will be multi-dimensional architectures composed of conventional semiconductors and emerging 2D materials. The examples are 1) X-ray detector based on GaN nanowires and 2D hybrid perovskite, 2) germanium/2D heterostructures enabling novel functionality, and 3) remote epitaxially grown ZnO/MoS2/ZnO as a physical implementation of microcavity based on remote epitaxy technique.
| Host | 이태우 교수(02-880-8021)