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[세미나: 5월 16일(목), 오후 1시] Prof. Thomas Mikolajick, TU Dresden(Technische Universität Dresden)

Title

Ferroelectrics for Enhanced Semiconductor Devices

Speaker

Prof. Thomas Mikolajick, NaMLab gGmbH and Chair of Nanoelectronics TU Dresden

* Biography

Thomas Mikolajick received the Dipl.-Ing. and the Dr.-Ing. In electrical engineering in 1990 and 1996 both from the University Erlangen-Nuremberg. From 1996 till 2006 he was in semiconductor industry (Siemens Semiconductor, Infineon, Qimonda) developing CMOS processes and memory devices with a strong focus on nonvolatile memories. In 2006 he was appointed professor for material science of electron devices at TU Bergakademie Freiberg. Since 2009 he is a professor for nanoelectronics at TU Dresden and in parallel the scientific director of NaMLab GmbH. He is author or co-author of more than 500 publications (current h-index of 93 according to google scholar) and inventor or co-inventor in more than 50 patent families. He is listed as a highly cited researcher in the 2022 and 2023 editions of Clarivate´s highly cited researchers list. In 2018 he served as the general chair of the IEEE ESSDERC/ESSCIRC conference in Dresden and in 2020/21/22 as the local chair and in 2023 as the general chair of the IEEE International Memory Workshop (IMW). From 2010 till 2019 he was the speaker of the BMBF leading edge cluster “Cool Silicon”. Currently he is one of the speakers of the center for advancing electronics Dresden (cfaed). Since 2019 he is also the speaker of the BMBF ForLab consortium. He is a member of IEEE since 1999 and received the senior membership status in 2009. Since 2023 he is an IEEE Fellow for “Contributions to Nonvolatile Memory”.  

| Date | Thursday, May 16th , 2024

| Time | 13:00 ~ 

| Venue | 33동 125호 (WCU 다목적실)

[Abstract]

Various types of data storage capabilities are essential in modern semiconductor systems.  Semiconductor memories on all hierarchy levels are becoming even more important by the increasing use of artificial intelligence in electronic systems [1]. Moreover, traditional charge-based memory devices are facing serious scaling limits. Therefore, the effort to bring memories based on other physical mechanisms like ferroelectric polarization, magnetoresistance, phase change, and various resistive switching effects have been continuously increased. 

Among these mechanisms, ferroelectric polarization has two important unique selling points. First, in contrast to the other alternatives, the switching is field driven and, therefore, the energy required for writing is the lowest of all options that offer nonvolatility. Second, there are three different options for the readout. Direct sensing of the switched charge in a ferroelectric capacitor (similar to DRAM), coupling of the polarization to the gate of a field effect transistor (similar to Flash memories) and modulation of the resistance of a tunnel junction (similar to resistive switching memories). Therefore, compared to other mechanisms ferroelectric switching offers higher flexibility of tailoring devices towards the application requirements while still using the same physical mechanism and material system. However, until about 15 years ago, these advantages could only be partially harvested due to the difficulties to integrate well-known ferroelectric materials like lead zirconium titanate or strontium bismuth tantalate etc. into state-of-the-art electronic fabrication processes. The discovery of ferroelectricity in hafnium oxide [2] changed this situation. Moreover, achieving ferroelectricity in AlScN [3] can be a valuable addition to compound semiconductor technologies based on GaN.  In this talk first, the basics of achieving ferroelectricity in ferroelectric hafnium oxide and the options to realize the above-mentioned readout mechanisms in practical devices as well as the status will be shown [4]. Moreover, the benefits of the unique properties for applications were memory and switching are no longer separated like in-memory computing or neuromorphic computing will be illustrated by recent results. Finally, an outlook to selected other application fields will be given. 

References:

[1] T. Schenk, M. Pešić, S. Slesazeck, U. Schroeder and T. Mikolajick, Memory technology—a primer for material scientists, Rep. Prog. Phys. 83, 086501 (2020)

[2] T.S. Böscke, J. Müller, D. Bräuhaus, U. Schröder, and U. Böttger, Ferroelectricity in hafnium oxide thin films, Appl. Phys. Lett. 99, 102903 (2011)

[3] S. Fichtner, N. Wolff, F. Lofink, L. Kienle and B. Wagner, AlScN: A III-V semiconductor based ferroelectric, Journal of Applied Physics 125, 114103 (2019)

[4] U. Schroeder, M. H. Park, T. Mikolajick, and C. S. Hwang, The fundamentals and applications of ferroelectric HfO2, Nature Reviews Materials volume 7, pages653–669 (2022)

| Host | 김상범 교수(02-880-7359), 박민혁 교수(02-880-7160)