Seoul National Univ. DMSE
People
Faculty
Hwang, Cheol-Seong
황철성
cheolsh@snu.ac.kr
Mailstop
33-111
Phone
880-7535
Fax
884-1413
Education
- 1993
Ph. D : Seoul National University, Department of Materials Science and Engineering
- 1989
M.S : Seoul National University, Department of Materials Science and Engineering
- 1987
B.S : Seoul National University, Department of Materials Science and Engineering
Career
- 2020-Present
SNU Distinguished Professor, Seoul National University
- 2019-Present
Member of National Academy of Engineering of Korea(NAEK)
- 2018-Present
Editorial Board Member, Physica Status Solidi(RRL), Wiley-VCH, Germany
- 2015-Present
Regular member of Korean Academy of Science and Technology (KAST)
- 2014-Present
International Advisory Board Member, Advanced Electronic Materials, Wiley-VCH, Germany
- 2014-Present
Fellow, Royal Society of Chemistry, UK
- 2014-2016
Director, Inter-university Semiconductor Research Center, Seoul National University
- 2012-Present
Editorial Board Member, Scientific Reports, Nature Publishing Group
- 1998-Present
Seoul National University, Department of Materials Science and Engineering, Professor
- 1994-1997
Samsung Electronics, Senior Researcher
- 1993-1994
Ceramics Division of Material Science and Engineering Lab., National Institute of Standards and Technology,
MD USA, Post-doctoral Research Fellow
Research Interests
1. Thin films technology for next-generation nonvolatile memory applications* Ferroelectric memory materials: Research of Pb(Zr,Ti)O3, BiFeO3 thin films.
* Resistive memory materials: Research of transition metal oxide TiO2, NiO,TaOx, HfO2 thin films.
* Phase change memory materials: Research of phase change material (GeSbTe) thin films.
* Charge trap flash memory materials: Research of ZnSnOx, and InGaZnOx thin films and application to 3D structure.2. Thin films technology for DRAM and Logic device applications* High-k materials: Research of TiO2, SrTiO3, (Ba, Sr)TiO3, Al-doped TiO2, TiO2/HfO2 stack, ZrO2, HfO2, and Hfsilicate thin films.
* Metal electrodes materials: Research of RuO2, Ru, SrRuO3, Hf, and Ti, TiN, and La thin films.
* High mobility channel materials: Characterizations of high-k materials on Ge or III-V compound semiconductor materials.3. Thin films technology for display device applications* Transparent conducting oxides materials: Research of ZnO, In-Ga-Zn-O, SnO, ZTO and ITO thin films
Selected Publications
1. Patents* Nonvolatile memory element, method for recording and reading the same (KOR 1021973) (2011)
* Charge trap flash memory device and method of fabricating the same (KOR 1029041) (2011)
* High-speed switching resistance switching element and method of switching resistance switching element
(KOR 1034838)) (2011)
[Total of 63 domestic and international patents]2. Papers* “Deposition of extremely thin (Ba,Sr)TiO3 thin films for ultra-large-scale integrated dynamic random access
memory application”, Appl. Phys. Lett., 67, 2819 (1995)
* “Atomic structure of conducting nanofilaments in TiO2 resistive switching memory”, Nat. Nanotechnol., 5, 148 (2010)
* “Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition”, J. Appl. Phys., 98, 033715 (2005)
* “Tristate Memory Using Ferroelectric-Insulator-Semiconductor Heterojunctions for 50% Increased Data
Storage”, Adv. Funct. Mater., 21, 4305 (2011)
* “Capacitors with an Equivalent Oxide Thickness of < 0.5 nm for Nanoscale Electronic Semiconductor Memory”,
invited feature article, Adv. Funct. Mater., 20, 2989 (2010)
[Total of ~ 370 publications in SCI journals]3. Books* “Metal-organic Chemical Vapor Deposition of High Dielectric (Ba,Sr)TiO3 Thin Films for Dynamic Random
Access Memory Applications”in “Chemical Vapor Deposition”, ��쾄urface Engineering Series Volume 2��� ASMinternational,
chap. 7, p.205-242
* “Atomic layer deposition for microelectronic applications”in “Atomic Layer Deposition of Nanostructured
Materials”,VCH-Wiley, chap. 8, p.161-192
* “Capacitor-based Random Access Memory” in “Nanoelectronics and Information Technology 3rd edtion”, Wiley-
VCH, chap. 27, pp.635-654
Lab Overview
1. Next generation memory and transistor development* Development and characterization of thin film technology for DRAM, FeRAM, ReRAM, PcRAM and CTF.2. Oxide thin film transistors for next generation transparent and flexible displays
Seoul National Univ. DMSE
People
Faculty
Hwang, Cheol-Seong
황철성
Mailstop
33-111
Phone
880-7535
Fax
884-1413
Homepage
http://dtfl.snu.ac.kr/
Education
- 1993
Ph. D : Seoul National University, Department of Materials Science and Engineering
- 1989
M.S : Seoul National University, Department of Materials Science and Engineering
- 1987
B.S : Seoul National University, Department of Materials Science and Engineering
Career
- 2020-Present
SNU Distinguished Professor, Seoul National University
- 2019-Present
Member of National Academy of Engineering of Korea(NAEK)
- 2018-Present
Editorial Board Member, Physica Status Solidi(RRL), Wiley-VCH, Germany
- 2015-Present
Regular member of Korean Academy of Science and Technology (KAST)
- 2014-Present
International Advisory Board Member, Advanced Electronic Materials, Wiley-VCH, Germany
- 2014-Present
Fellow, Royal Society of Chemistry, UK
- 2014-2016
Director, Inter-university Semiconductor Research Center, Seoul National University
- 2012-Present
Editorial Board Member, Scientific Reports, Nature Publishing Group
- 1998-Present
Seoul National University, Department of Materials Science and Engineering, Professor
- 1994-1997
Samsung Electronics, Senior Researcher
- 1993-1994
Ceramics Division of Material Science and Engineering Lab., National Institute of Standards and Technology, MD USA, Post-doctoral Research Fellow
Research Interests
1. Thin films technology for next-generation nonvolatile memory applications* Ferroelectric memory materials: Research of Pb(Zr,Ti)O3, BiFeO3 thin films.
* Resistive memory materials: Research of transition metal oxide TiO2, NiO,TaOx, HfO2 thin films.
* Phase change memory materials: Research of phase change material (GeSbTe) thin films.
* Charge trap flash memory materials: Research of ZnSnOx, and InGaZnOx thin films and application to 3D structure.2. Thin films technology for DRAM and Logic device applications* High-k materials: Research of TiO2, SrTiO3, (Ba, Sr)TiO3, Al-doped TiO2, TiO2/HfO2 stack, ZrO2, HfO2, and Hfsilicate thin films.
* Metal electrodes materials: Research of RuO2, Ru, SrRuO3, Hf, and Ti, TiN, and La thin films.
* High mobility channel materials: Characterizations of high-k materials on Ge or III-V compound semiconductor materials.3. Thin films technology for display device applications* Transparent conducting oxides materials: Research of ZnO, In-Ga-Zn-O, SnO, ZTO and ITO thin films
Selected Publications
1. Patents* Nonvolatile memory element, method for recording and reading the same (KOR 1021973) (2011)
* Charge trap flash memory device and method of fabricating the same (KOR 1029041) (2011)
* High-speed switching resistance switching element and method of switching resistance switching element
(KOR 1034838)) (2011)
[Total of 63 domestic and international patents]2. Papers* “Deposition of extremely thin (Ba,Sr)TiO3 thin films for ultra-large-scale integrated dynamic random access
memory application”, Appl. Phys. Lett., 67, 2819 (1995)
* “Atomic structure of conducting nanofilaments in TiO2 resistive switching memory”, Nat. Nanotechnol., 5, 148 (2010)
* “Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition”, J. Appl. Phys., 98, 033715 (2005)
* “Tristate Memory Using Ferroelectric-Insulator-Semiconductor Heterojunctions for 50% Increased Data
Storage”, Adv. Funct. Mater., 21, 4305 (2011)
* “Capacitors with an Equivalent Oxide Thickness of < 0.5 nm for Nanoscale Electronic Semiconductor Memory”,
invited feature article, Adv. Funct. Mater., 20, 2989 (2010)
[Total of ~ 370 publications in SCI journals]3. Books* “Metal-organic Chemical Vapor Deposition of High Dielectric (Ba,Sr)TiO3 Thin Films for Dynamic Random
Access Memory Applications”in “Chemical Vapor Deposition”, ��쾄urface Engineering Series Volume 2��� ASMinternational,
chap. 7, p.205-242
* “Atomic layer deposition for microelectronic applications”in “Atomic Layer Deposition of Nanostructured
Materials”,VCH-Wiley, chap. 8, p.161-192
* “Capacitor-based Random Access Memory” in “Nanoelectronics and Information Technology 3rd edtion”, Wiley-
VCH, chap. 27, pp.635-654
Lab Overview
1. Next generation memory and transistor development* Development and characterization of thin film technology for DRAM, FeRAM, ReRAM, PcRAM and CTF.2. Oxide thin film transistors for next generation transparent and flexible displays