유효빈
Hyobin Yoo
- Email : hyobinyoo@snu.ac.kr
- Mailstop : 33-310
- Phone : 880-1550
- Fax : 883-8197
- Homepage : https://mdal.notion.site
Education
Ph.D.: Seoul National University, Department of Materials Science and Engineering
B.S.: Seoul National University, Department of Materials Science and Engineering
Career
Seoul National University, Department of Materials Science and Engineering, Assistant Professor
Sogang University, Department of Physics, Associate Professor
Sogang University, Department of Physics, Assistant Professor
Harvard University, Department of Physics Research Associate
Harvard University, Department of Physics Post-doctoral Fellow
Research Interests
1. Operando transmission electron microscopy
– Integration of MEMS technique with transmission electron microscopy
– Atomic structural dynamics in working electronic and electrochemical devices
– Functional domain dynamics in unconventional ferroic materials and devices
2. Cryo transmission electron microscopy
– Atomic scale structural and chemical characterization of quantum materials at low temperatures
– Non-invasive structural characterization of beam-sensitive soft materials
3. Electrical measurements and functional characterization
– Electrical characterization of functional materials and devices
– Investigation of charge transport phenomena and quantum effects in mesoscopic devices
Selected Publications
Papers
-“Unconventional domain tessellations in moiré-of-moiré lattices”, Nature 641, 896 (2025)
-“Operando electron microscopy investigation of polar domain dynamics in twisted van der Waals homobilayers”, Nature Materials 22, 992 (2023)
-“Anomalous optical excitations from arrays of whirlpooled lattice distortions in moiré superlattices”, Nature Materials 21, 890 (2022)
-“Atomic and electronic reconstruction at the van der Waals interface in twisted bilayer graphene”, Nature Materials 18, 448 (2019)
Lab Overview
The primary objective of our research group is to advance atomic-scale engineering capabilities in both materials and devices. We achieve this by exploiting operando transmission electron microscopy (TEM), integrating state-of-the-art atomic resolution TEM techniques with modern semiconductor device fabrication and precise electrical measurements. Our research emphasizes a comprehensive understanding and control of material properties and device functionalities at the atomic scale. By leveraging atomic-scale structural and chemical characterization along with precision fabrication techniques, we aim to develop novel materials and devices with unprecedented performance. This research drives innovation at the intersection of materials science and device engineering, leading to technological breakthroughs and a deeper understanding of material behavior at its most fundamental level.