손준우
Son, Junwoo
- Email : junuson@snu.ac.kr
- Mailstop : 33-204
- Phone : 02-880-7195
- Fax : none
- Homepage : http://oqml.snu.ac.kr
Education
Ph.D. : University of California, Santa Barbara, Materials Department
B.S. : Seoul National University, Department of Materials Science and Engineering
Career
Seoul National University, Department of Materials Science and Engineering, Associate Professor
University of California, San Diego, ECE Department, Visiting Professor
POSTECH, Department of Materials Science and Engineering, Associate Professor
POSTECH, Department of Materials Science and Engineering, Assistant Professor
Univ. of Calif., Santa Barbara, Materials Department and ECE department, Postdoctoral Associate.
Research Interests
1. Emerging Oxide and Quantum Materials
– Oxide Materials with Phase Transition
– Oxide Semiconductors with High Electron Mobility
– Oxide Heterostructures and Quantum Wells
2. Emerging Devices and Sensors
– Next-generation Electronic Devices
– Ultrasensitive Gas and Bio Sensors
– Threshold Mott Switches and Memory Devices
3. Thin Film Growth and Characterization
– Epitaxial Thin Film Growth
– Atomically Controlled Oxide Heterostructures
– Synchrotron-based Characterization
Selected Publications
1. Papers
– “Piezo-strain-controlled phase transition in single-crystalline Mott switches for threshold-manipulated leaky-integrate-and-fire neurons”, Science Advances (2024)
– “Embedded metallic nanoparticles facilitate metastability of switchable metallic domains in Mott threshold switches”, Nature Communications, 13, 4609 (2022)
– “Reversible manipulation of photoconductivity caused by surface oxygen vacancies in perovskite stannates with ultraviolet light”, Advanced Materials, 34, 2107650 (2022)
– “Heterogeneous integration of single-crystalline rutile nanomembranes with steep phase transition on silicon substrates”, Nature Communications, 12, 5019 (2021)
– “Reversible phase modulation and hydrogen storage in multivalent VO2 epitaxial films”, Nature Materials, 15, 1113 (2016)
Lab Overview
Our research focuses on the fundamental understanding of structure-property relationships of nanoscale oxide materials and quantum heterostructures, including functional defects in oxide semiconductors and low-dimensional oxides. We are paticularly interested in designing new functionality of emerging inorganic materials, such as phase-transforming oxides and high-electron-mobility oxide semiconductors, by materials discovery and defect control. Emerging oxide materials with maximized properties can dramatically improve the performance of next-generation semiconductor devices as a key ingredients for future technology (e.g., 1) transparency and high conductivity for transparent electronics, 2) a metal-insulator phase transition for a low-power switching device and an ultra-sensitive sensor device, 3) ferroelectricity for nonvolatile memory devices, 4) high electron mobility for high-speed electronic devices)). Based on the new functionality of various oxide semiconductors developed by our group, we are also conducting research and development on the possibility of realizing low-power and high-density electronics, high-sensitivity sensors and various future applications that could not be achieved before.